j i, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 STW9NA80 sth9na80fi n - channel 800v - 0.85q - 9.1a - to-247/isowatt218 fast power mos transistor type STW9NA80 sth9na80fi vdss 800 v 800 v rds(on) < 1.0q < 1.0u id 9.1 a 5.9 a typical ros(on) = 0.85 n 30v gate to source voltage rating 100% avalanche tested repetitive avalanche data at 100c low intrinsic capacitances gate charge minimized reduced threshold voltage spread applications ? high current, high speed switching . switch mode power supplies (smps) . dc-ac converters for welding equipment and uninterruptible power supplies and motor drive to-247 isowatt218 internal schematic diagram absolute maximum ratings symbol vds vdgr vgs id id |dm(?) plot viso tglg t] parameter drain-source voltage (vgs = 0) drain- gate voltage (ros = 20 ksj) gate-source voltage drain current (continuous) at tc = 25 c drain current (continuous) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c derating factor insulation withstand voltage (dc) storage temperature max. operating junction temperature value STW9NA80 sth9na80fi 800 800 30 9.1 6 36.4 190 1.52 _ 5.9 3.9 36.4 80 0.64 4000 -65 to 150 150 unit v v v a a a w w/c v c c ?) pulse width limited by safe operating area nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
STW9NA80-sth9na80fi thermal data rthj-case r-thj-amb rthc-sink t, thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose to-247 0.65 isowatt218 1.56 30 0.1 300 c/w c/w c/w c avalanche characteristics symbol iar eas parameter avalanche current, repetitive or not-repetitive (pulse width limited by tj max) single pulse avalanche energy (starting tj = 25 c, id = iar, vdd = 50 v) max value 9.1 415 unit a mj electrical characteristics (tcase = 25 c unless otherwise specified) off symbol v(br)dss idss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vds = 0) test conditions id= 250 ha vgs = 0 vds = max rating vds = max rating tc=100c vgs = 30 v mill. 800 typ. max. 50 500 100 unit v ha ha na on(*) symbol vgs(th) rds(on) ld(on) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds = v6s id = 250 ^a vgs = 10v id= 4.5 a vds > id(oh) x rds(on)max vgs = 10 v min. 2.25 9.1 typ. 3 0.85 max. 3.75 1 unit v u a dynamic symbol 9fs (*) cjss coss crss parameter forward transcend uctance input capacitance output capacitance reverse transfer capacitance test conditions vds > id(op) x ros(on)max id - 4.5a vds = 25 v f = 1 mhz vgs = 0 min. 7.5 typ. 10 2900 290 80 max. 3800 380 105 unit s pf pf pf
STW9NA80-sth9na80fi electrical characteristics (continued) switching on symbol td(on) tr qg qgs qgd parameter turn-on time rise time total gate charge gate-source charge gate-drain charge test conditions vdd = 400v id = 4.5 a rg = 4.7 } vgs = 10 v (see test circuit, figure 3) vdd = 640 v id = 9 a vgs=10v min. typ. 37 45 115 15 55 max. 50 60 150 unit ns ns nc nc nc switching off symbol tr(voff) tf tc parameter off-voltage rise time fall time cross-over time test conditions vdd = 640 v id = 9 a rg = 4.7 n vgs = 10v (see test circuit, figure 5) min. typ. 45 15 70 max. 60 20 91 unit ns ns ns source drain diode symbol isd isdm(') vsd (*) trr qrr irrm parameter source-drain current source-drain current (pulsed) forward on voltage reverse recovery time reverse recovery charge reverse recovery current test conditions isd = 9.1 a vgs = 0 !sd= 9 a di/dt = 100 a/u.s vdd = 100 v tj = 150c (see test circuit, figure 5) min. typ. 765 113.4 35 max. 9.1 36.4 1.6 unit a a v ns uc a (?) pulsed: pulse duration = 300ns, duty cycle 1,5% (?) pulse width limited by safe operating area safe operating area for to-247 safe operating area for isowatt218 10 10'
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